papers in 2013

2013年研究発表一覧


研究論文(学術誌に掲載されたもの)

Norihiro Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Growth ofcorundum-structured In2O3 thin films on sapphiresubstrates with Fe2O3 buffer layers"
Journal of Crystal Growth, Vol.364, Iss.2, pp.30-33, Feb. 2013.

Toshiyuki Kawaharamura*, Kazuharu Mori**, Hiroyuki Orita**, Takahiro Shirahata**, Shizuo Fujita, and Takashi Hirao*
(*Kochi University of Tehnology, **Toshiba Mitsubishi Electric Industrial Corporation)
``Effect of O3 and aqueous ammonia on crystallization of MgO thin film grown by mist chemical vapor deposition"
Japanese Journal of Applied Physics, Vol.52, No.3, 035501(5pages), Mar. 2013.

Takayoshi Oshima*, Kenichi Kaminaga*, Akira Mukai*, Kohei Sasaki**, Takekazu Masui***, Akito Kuramata**, Shigenobu Yamakoshi**, Shizuo Fujita, and Akira Ohtomo*
(*Tokyo Institute of Technology, **Tamura Corporation, ***Tamura Corporation)
``Formation of semi-insulating layers on semiconducting β-Ga2O3 single crystals by thermal oxidation"
Japanese Journal of Applied Physics, Vol.52, No.5, 051101(5pages), May. 2013.

Kentaro Kaneko, Itsuhiro Kakeya, Sachio Komori, and Shizuo Fujita
``Band gap and function engineering for novel functional alloy semiconductors: Bloomed as magnetic properties at room temperature with α-(GaFe)2O3"
Journal of Applied Physics, Vol.113, Iss.23, 233901(6pages), June 2013.

Sam-Dong Lee, Kazuaki Akaiwa, and Shizuo Fujita
``Thermal stability of single crystalline alpha gallium oxide films on sapphire substrates"
Physica Status Solidi (c), Vol.10, No.11, pp.1592-1595, Nov. 2013.

Kentaro Kaneko, Hiroshi Ito, Sam-Dong Lee, and Shizuo Fujita
``Oriented growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates"
Physica Status Solidi (c), Vol.10, No.11, pp.1596-1599, Nov. 2013.


研究論文(プロシーディングス等に掲載されたもの)

Kentaro Kaneko, Kazuaki Akaiwa, and Shizuo Fujita
``Crystal structure of non-doped and Sn-doped α-(GaFe)2O3 thin films"
Materials Research Society Symposium Proceedings Vol.1494, DOI:10.1557/opl.2013.5.

Kazuaki Akaiwa, Norihito Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Fabrication of corundum-structured α-(InFe)2O3 alloy thin films on sapphire substrates by inserting α-Fe2O3 suffer layer"
Materials Research Society Symposium Proceedings Vol.1494, DOI:10.1557/opl.2013.125.


解説

藤田静雄
``ワイドギャップ半導体材料 ── 花満開に向けて"
応用物理, 第82巻, 第10号, pp.836-845, Oct. 2013.


国際会議等発表

Shizuo Fujita, Kentaro Kaneko, Kazuaki Akaiwa, Sam-Dong Lee, and Norihiro Suzuki
``Wide band gap oxide semiconductors for novel device applications (Invited)"
6th Asia-Pacific Workshop on Widegap Semiconductors, Tamsui, New Taipei City, Taiwan (May 12-15, 2013) [oral, May 14].

Takayoshi Oshima1, Kenichi Kaminaga1, Akira Mukai1, Kohei Sasaki2, Takekazu Masui3, Akito Kuramata2, Shigenobu Yamakoshi2, Shizuo Fujita, and Akira Ohtomo1,4
(1Tokyo Institute of Technology, 2Tamura Corporation, 3KOHA Co., Ltd., 4TIES and MCES)
``Semi-insulation of conducting β-Ga2O3 single crystal surfaces by thermal oxidation"
40th Int. Symp. Compound Semiconductors, Kobe, Japan (May 19-23, 2013) #MoPC-07-1 [poster, May 20].

Sam-Dong Lee and Shizuo Fujita
``Thermal stability for single crystalline alpha gallium oxide films on sapphire substrate"
40th Int. Symp. Compound Semiconductors, Kobe, Japan (May 19-23, 2013) #MoPC-07-10 [poster, May 20].

Kentaro Kaneko, Hiroshi Ito, Sam-Dong Lee, and Shizuo Fujita
``Epitaxial growth of beta gallium oxide thin films on yttrium-stabilized zirconia substrates"
40th Int. Symp. Compound Semiconductors, Kobe, Japan (May 19-23, 2013) #MoPC-07-11 [poster, May 20].

Kazuaki Akaiwa, Norihiro Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Doping effects on conduction properties of α-Ga2O3 thin films on sapphire substrates"
40th Int. Symp. Compound Semiconductors, Kobe, Japan (May 19-23, 2013) #TuB3-4 [oral, May 21].

Kentaro Kaneko, Kazuaki Akaiwa, Sam-Dong Lee, and Shizuo Fujita
``Band gap engineering and function engineering with corundum-structured gallium oxide-based compounds and alloys"
55th Electronic Materials Conference, South Bend, IN, USA (June 26-28, 2012) #E1 [oral, June 26].

Shizuo Fujita
``Epitaxial growth of wide band gap III-oxide semiconductor thin films (invited)"
17th International Conference on Crystal Growth and Epitaxy, Warsaw, Poland (Aug. 11-16, 201) #Session G10/TuO2 [oral, Aug. 13].

Norihiro Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Growth of corundum-structured α-(InxGa1-x)2O3 alloy thin films on sapphire substrates with buffer layers"
17th International Conference on Crystal Growth and Epitaxy, Warsaw, Poland (Aug. 11-16, 201) #Session T03/Th01 [oral, Aug. 15].

Shizuo Fujita, Kentaro Kaneko, Toshiyuki Kawaharamura, and Mamoru Furuta
``Ultrasonc-assisted mist chemical vapor deposition of II-oxide and related oxide compounds"
16th International Conference on II-VI Compounds and Related Materials, Nagahama, Japan (Sept. 9-13, 2013) #Mo-B4 [oral, Sept. 9].

Kazuaki Akaiwa, Yoshito Ito, and Shizuo Fujita
``Growth and characterization of alpha-Ga2O3 films on sapphire substrates with alpha-(AlGa)2O3 buffer layer"
2013 JSAP-MRS Joint Symposia, Kyoto, Japan (Sept. 16-20, 2013) #18p-PM1-33 [poster, Sept. 18].

Kazuaki Akaiwa, Norihiro Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Doping and alloying to alpha-Ga2O3 thin films on sapphire substrates"
2013 JSAP-MRS Joint Symposia, Kyoto, Japan (Sept. 16-20, 2013) #20a-M6-7 [oral, Sept. 20].

Shizuo Fujita, Kentaro Kaneko, Shigetaka Katori*, Toshiyuki Kawaharamura**, and Mamoru Furuta**
(*Tsuyama National College of Tech., **Kochi Univ. Tech.)
``Ultrasonic-assisted mist deposition for green materials and devices"
45th International Conference on Solid State Devices and Materials, Fukuoka, Japan (Sept. 24-27, 2013) #P-3-1 [oral, Sept. 26].

Takayuki Uchida, Toshiyuki Kawaharamura*, Mamoru Furuta*, and Shizuo Fujita
(*Kochi Univ. Tech.)
``Fabrication of aluminum oxide thin films by solution-source non-vacuum process of mist chemical vapor deposition with ozone assistance"
45th International Conference on Solid State Devices and Materials, Fukuoka, Japan (Sept. 24-27, 2013) #P-3-2 [oral, Sept. 26].

Toshiyuki Kawaharamura*, Takayuki Uchida, Kenji Shibayama, Shizuo Fujita, Takahiro Hiramatsu**, and Hiroyuki Orita**
(*Kochi Univ. Tech., **Toshiba Mitsubishi-Electric Industrial Systems-Corpration)
``Aluminum oxide passivation layer for crystalline silicon solar cells deposited by non-vacuum mist CVD"
2013 Materials Research Society Fall Meeting, Boston, USA (Dec.1-6, 2013) #GG3.21 [poster, Dec. 2].


その他

藤田静雄
``ミストデポジション法による薄膜形成"
第52回プラスチックフィルム研究会講座, 東京工業大学 (2013年3月4日).

小森祥央,稲葉遼太郎,金子健太郎,藤田静雄,掛谷一弘,鈴木実
(*ECN (NL), **Tempress (NL)) ``Pb1-yBiySr2Y1-xCaxCu2O7+δ単結晶エピタキシャル薄膜の成長と評価"
2013年第60回応用物理学会春季学術講演会, 神奈川工科大学, (2013年3月27日-30日) 27p-G3-7.

小松 雄爾*,原田大資,Erik W. Schuring*, Ard H.G. Vlooswijk**,香取重尊,藤田静雄,Ilkay Cesar*
(*ECN (NL), **Tempress (NL))
``ピラミッド凹凸面のキャリア濃度深さ方向分析: 電子顕微鏡を用いた電解液容量電圧(ECV)法の較正"
2013年第60回応用物理学会春季学術講演会, 神奈川工科大学, (2013年3月27日-30日) 29p-PA9-3.

藤田静雄
``デバイスに向けた酸化ガリウム半導体の結晶成長と物性制御"
応用物理学会 結晶工学分科会主催第139回結晶工学分科会研究会, 京都テルサ (2013年6月6日).

Takayuki Uchida, Toshiyuki Kawaharamura*, and Shizuo Fujita
(*Kochi Univ. Tech.)
``Growth and properties of high quality AlOx by atmospheric pressure mist CVD"
第32回電子材料シンポジウム, ラフォーレ琵琶湖 (2013年7月10日-12日) We1-7.

Yoshito Ito, Sam-Dong Lee, and Shizuo Fujita
``Modification in crystal structures of α-Ga2O3 grown on sapphire substrates"
第32回電子材料シンポジウム, ラフォーレ琵琶湖 (2013年7月10日-12日) Th6-1.

Kazuaki Akaiwa, Norito Suzuki, Kenta Suzuki, Kentaro Kaneko, and Shizuo Fujita
``Doping and alloying effects onelectrical properties of α-Ga2O3 thin films"
第32回電子材料シンポジウム, ラフォーレ琵琶湖 (2013年7月10日-12日) Th6-2.

Kentaro Kaneko, Sachio Komori, Itsuhiro Kakeya, Shizuo Fujita, and Katsuhisa Tanaka
``Evaluation of electrical conductivity and crystal structure of alpha-V2O3-Ga2O3 thin films"
第32回電子材料シンポジウム, ラフォーレ琵琶湖 (2013年7月10日-12日) Th6-3.

Takayoshi Oshima1, Kenichi Kaminaga1, Akira Mukai1, Kohei Sasaki2, Takekazu Masui3, Akito Kuramata2, Shigenobu Yamakoshi2, Shizuo Fujita, and Akira Ohtomo1,4
(1Tokyo Institute of Technology, 2Tamura Corporation, 3KOHA Co., Ltd., 4TIES and MCES)
``Semi-insulation behavior in conducting β-Ga2O3 single crytal surfaces by thermal oxidation"
第32回電子材料シンポジウム, ラフォーレ琵琶湖 (2013年7月10日-12日) Th6-4.

金子健太郎,小森祥央,掛谷一弘,藤田静雄,田中勝久
``アモルファスalpha-Fe2O3-Co2O3薄膜の磁気特性評価"
2013年第74回応用物理学会秋季学術講演会, 同志社大学, (2013年9月16日-20日) 16p-P3-1.

多次見大樹*,奥秋良隆*,畠山匠*,金子健太郎,藤田静雄,尾沼猛儀*,**,山口智広*,本田徹*
(*工学院大,**東京高専)
``ミストCVD法を用いたGaN基板上へのGa2O3成長
2013年第74回応用物理学会秋季学術講演会, 同志社大学, (2013年9月16日-20日) 16p-P8-13

鈴木規央,金子健太郎,藤田静雄
``超音波噴霧ミストCVD法によるコランダム構造In2O3薄膜の成長"
2013年第74回応用物理学会秋季学術講演会, 同志社大学, (2013年9月16日-20日) 17a-B4-1.

内田貴之,川原村敏幸*,柴山健次,藤田静雄,平松幸浩**,織田容征**
(*高知工大ナノ研,**東芝三菱電機産業システム)
``大気圧ミストCVD法で作製した酸化アルミニウム(AlOx)薄膜の太陽電池用パッシベーション応用"
2013年第74回応用物理学会秋季学術講演会, 同志社大学, (2013年9月16日-20日) 19a-A4-1.