Publications in 2016


Original Articles

Masaya Oda*, Kentaro Kaneko, Shizuo Fujita, and Toshimi Hitora*
(*FLOSFIA Inc.)
``Crack-free thick (∼5 μm) α-Ga2O3 films on sapphire substrates with α-(Al,Ga)2O3 buffer layers"
Japanese Journal of Applied Physics Vol.55, No.12, 1202B4 (5 pages), Dec. 2016.

Sam-dong Lee, Kentaro Kaneko, and Shizuo Fujita
``Homoepitaxial growth of beta gallium oxide films by mist chemical vapor deposition"
Japanese Journal of Applied Physics Vol.55, No.12, 1202B8 (6 pages), Dec. 2016.

Kazuaki Akaiwa*, Kentaro Kaneko, Kunio Ichino*, and Shizuo Fujita
(*Tottori Univ.)
``Conductivity control of Sn-doped α-Ga2O3 thin films grown on sapphire substrates"
Japanese Journal of Applied Physics Vol.55, No.12, 1202BA (8 pages), Dec. 2016.

Kentaro Kaneko, Takeyoshi Onuma*, Keiichi Tsumura, Takayuki Uchida, Riena Jinno, Tomohiro Yamaguchi**, Tohru Honda**, and Shizuo Fujita
(*Kogakuin Univ.)
``Growth of rocksalt-structured MgxZn1-xO (x>0.5) films on MgO substrates and their deep-ultraviolet luminescence"
Applied Physics Express, Vol.9, No.11, 111102 (4 pages), Nov. 2016.

Riena Jinno, Takayuki Uchida, Kentaro Kaneko, and Shizuo Fujita
``Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(AlxGa1-x)2O3 buffer layers"
Applied Physics Express, Vol.9, No.7, 071101(4 pages), Jul. 2016.

Giang T. Dang*, Takayuki Uchida, Toshiyuki Kawaharamura**, Mamoru Furuta**, Adam R. Hyndman*, Rodrigo Martinez*, Shizuo Fujita, Roger J. Reeves*, and Martin W. Allen*
*University of Canterbury, **Kochi University of Technology
``Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films"
Applied Physics Express, Vol.9, No.4, 041101(4 pages), Apr. 2016.

Kentaro Kaneko, Kenta Suzuki, Yoshito Ito, and Shizuo Fujita
``Growth characteristics of corundum-structured α-(AlxGa1-x)2O3/Ga2O3 heterostructures on sapphire substrates"
Journal of Crystal Growth, Vol.436, pp.150-154, Feb. 2016. Reviews

Shizuo Fujita, Masaya Oda*, Kentaro Kaneko, and Toshimi Hitora*
(*FLOSFIA Inc.)
``Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices"
Japanese Journal of Applied Physics Vol.55, No.12, 1202A3 (9 pages), Dec. 2016.